Showing 1-3 of 3 items.
Related Patent Family Members
| Name | Sector | Abstract | Year Applied | Year Granted | Authority |
|---|---|---|---|---|---|
| EXTREME ULTRAVIOLET LITHOGRAPHY MASK BLANK AND MANUFACTURING METHOD THEREFOR | Manufacturing | A reflective element for extreme ultraviolet semiconductor lithography systems substantially minimizes the phase transitions of reflected extreme ultraviolet light by a reflective multilayer coating on an extremely planar surface which... A reflective element for extreme ultraviolet semiconductor lithography systems substantially minimizes the phase transitions of reflected extreme ultraviolet light by a reflective multilayer coating on an extremely planar surface which is parallel to a family of (111) crystallographic planes of a single crystal silicon wafer. The extremely planar surface is made by using three of the families of (111) crystallographic planes of the single crystal silicon as etch barriers for anisotropic etchants. | 1998 | _____ | WO |
| Extreme ultraviolet lithography mask blank and manufacturing method therefor | Manufacturing | A reflective element for extreme ultraviolet semiconductor lithography systems substantially minimizes the phase transitions of reflected extreme ultraviolet light by a reflective multilayer coating on an extremely planar surface which... A reflective element for extreme ultraviolet semiconductor lithography systems substantially minimizes the phase transitions of reflected extreme ultraviolet light by a reflective multilayer coating on an extremely planar surface which is parallel to a family of (111) crystallographic planes of a single crystal silicon wafer. The extremely planar surface is made by using three of the families of (111) crystallographic planes of the single crystal silicon as etch barriers for anisotropic etchants. | 1999 | 2000 | US |
| Extreme ultraviolet lithography mask blank and manufacturing method therefor | Manufacturing | A reflective element for extreme ultraviolet semiconductor lithography systems substantially minimizes the phase transitions of reflected extreme ultraviolet light by a reflective multilayer coating on an extremely planar surface which... A reflective element for extreme ultraviolet semiconductor lithography systems substantially minimizes the phase transitions of reflected extreme ultraviolet light by a reflective multilayer coating on an extremely planar surface which is parallel to a family of (111) crystallographic planes of a single crystal silicon wafer. The extremely planar surface is made by using three of the families of (111) crystallographic planes of the single crystal silicon as etch barriers for anisotropic etchants. | 1997 | 1999 | US |
Showing 1-1 of 1 item.
Sector Activity
| Sector | Subsectors |
|---|---|
| Manufacturing | TOP-DOWN (1) |
Showing 1-1 of 1 item.
Partners
| Name | Organisation Type | Country |
|---|---|---|
| Advanced Micro Devices, Inc. | private company | United States |