| Abstract |
This project, entitled ‘Metal-Piezoelectric-Insulator-Semiconductor Field-Effect-Transistor’ (MPIS-FET), will fabricate a metal-piezoelectric-insulator-semiconductor field-effect-transistor device for pressure sensing, in order to perform high-sensitivity strain detection (gauge factor>100) under harsh conditions (high temperature>500oC). High-temperature pressure sensors are of extreme importance for automotive, aerospace, aircraft, power generation industry, and scientific instruments. The current pressure sensors suffer from various drawbacks such as poor thermal stability, low sensitivity, poor chemical inertness, high complexity in readout circuit, and high cost.
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