Systems and methodologies for programming a memory cell having a functional or selective conductive layer are provided. The functional zone can include active, and/or passive and/or barrier layers. The system includes a controller that can actively trace conditions associated with such programming. In one aspect of the present invention, by providing an external stimulus, an associated electrical or optical property associated with the memory cell is affected. Such property is then compared to a predetermined value to set/verify a programming state for the memory cell. The external stimulus can then be removed upon completion of the programming, or reduced to a verifying state to read information. The memory cell can include alternating layers of active, passive, diode, and barrier layers positioned between at least two electrodes.

The invention is in the field of Computer Engineering and can be used in memory devices for various computers, specifically in developing a universal memory system with high data reading and writing speed along with capabilities for long term storage and high information density, as well as in developing video and audio equipment of a new generation, in developing associative memory systems, and in creating synapses (electric circuit elements with programmable electric resistance) for neuronal nets. The lack of such an element holds back the development of true neuronal computers. The invention is based on the task of creating an essentially new kind of memory cell that would allow to store several bits of data, would have fast resistance switching and require low operating voltage but at the same time would allow to combine its manufacturing technology with the modem semiconductor manufacturing technology. Fig. 6 shows an implementation option of the claimed memory cell containing two continuous aluminum electrodes 1 and 2 between which there is a multilayer functional zone consisting of one active layer 3, one barrier layer 4 and one passive layer 5. This structure of the functional zone allows to change electric resistance of the active zone and/or form highly conductive areas or lines with metallic conduction in the active zone under the influence of the external electric field and/or its light emission on the memory cell and to retain its electric resistance for long periods of time without applying external electric fields. The memory cell is advantageously distinctive from the currently used single bit memory elements, in that it can store several bits of information. The data storage time depends on the memory cell structure, the material used for the functional zone and the writing mode. It can vary from several seconds (can be used to build dynamic memory) to several years (can be used for building long term memory, such as Flash memory). It is possible to create universal memory that can work in both dynamic and long-term modes, depending on the data-writing mode.

The invention relates to computer engineering and can be used for various computer memory devices and for developing video-audio apparatus of new generation, systems of associative memories and synapses (an element of a electric line provided with a programmable electric resistance) for neural networks of neurocomputers. The inventive memory cell makes it possible to preserve several data bits and has a high speed. Said memory cell comprises two aluminium solid electrodes (1 and 2) and a multilayer functional area disposed therebetween and consisting of an active layer (3), a barrier layer (4) and a passive layer (5).

Disclosed are memory devices with high data reading and writing speed along with capabilities for long term storage and high information density. The memory devices allow storage of several bits of data, have fast resistance switching and require low operating voltage but at the same time allow to combine its manufacturing technology with the modern semiconductor manufacturing technology. An exemplary implementation option of the memory cell contains two continuous electrodes between which there is a multilayer functional zone consisting of one active layer, one barrier layer and one passive layer.

A method of forming and operating a memory storage and retrieval device containing (a) an electrically conductive first electrode; (b) an electrically conductive second electrode; (c) a layer stack intermediate the first and second electrodes containing (d) at least one active layer with variable electrical conductivity; and (e) at least one passive layer containing a source material for varying the electrical conductivity of the at least one active layer upon application of an electrical potential difference between the first and second electrodes.

A memory storage and retrieval device containing (a) an electrically conductive first electrode; (b) an electrically conductive second electrode; (c) a layer stack intermediate the first and second electrodes containing (d) at least one active layer with variable electrical conductivity; and (e) at least one passive layer containing a source material for varying the electrical conductivity of the at least one active layer upon application of an electrical potential difference between the first and second electrodes.

Systems and methodologies for fabrication of a memory cell or array are disclosed. The memory cell employs a functional zone with passive and active layers. Such passive and active layers facilitate electron migration, and allow a plurality of states for the memory cell. A memory device formed in accordance with the disclosed methodology can include a top-electrode formed over the functional layer, which in turn over lays a lower conductive layer.