Methods and apparatus are provided for controlling writing and reading of data in an array of A storage fields of a probe-based data storage device in which data is written to and read from the array of storage fields by a corresponding array of probes. One method provides error-tolerance by exploiting the inherent parallelism of the probe storage array. A user data block to be written to the A-field array is first coded to produce a plurality of C-byte codewords, such that r.C=k₁.A where r is the number of codewords and k₁ is an integer>=1. A sub-blocks of k₁ bytes are produced from the codewords by selecting successive bytes of each sub-block cyclically from the r codewords. The A sub-blocks are then written via respective probes to the corresponding storage fields of the storage field array.

Methods and apparatus are provided for controlling writing and reading of data in an array of A storage fields of a probe-based data storage device in which data is written to and read from the array of storage fields by a corresponding array of probes. One method provides error-tolerance by exploiting the inherent parallelism of the probe storage array. A user data block to be written to the A-field array is first coded to produce a plurality of C-byte codewords, such that r·C=k1A where r is the number of codewords and k1 is an integer greater than or equal to 1. A sub-blocks of k1 bytes are produced from the codewords by selecting successive bytes of each sub-block cyclically from the r codewords. The A sub-blocks are then written via respective probes to the corresponding storage fields of the storage field array.

Methods and apparatus are provided for controlling writing and reading of data in an array of A storage fields of a probe-based data storage device in which data is written to and read from the array of storage fields by a corresponding array of probes. One method provides error-tolerance by exploiting the inherent parallelism of the probe storage array. A user data block to be written to the A-field array is first coded to produce a plurality of C-byte codewords, such that r·C=k1A where r is the number of codewords and k1 is an integer greater than or equal to 1. A sub-blocks of k1 bytes are produced from the codewords by selecting successive bytes of each sub-block cyclically from the r codewords. The A sub-blocks are then written via respective probes to the corresponding storage fields of the storage field array.

This invention is a write-once near-field optical medium using a zinc oxide nano-structured thin film as the localized near-field optical interaction layer. This write-once near-field optical medium is a multi-layered body at least comprising: (a) a substrate of transparent material; (b) a first protective and spacer layer formed on one surface of the substrate, which is made of transparent dielectric material; (c) a zinc oxide nano-structured thin film which is capable of causing localized near-field optical interactions; (d) a second protective and spacer layer formed on the localized near-field optical interaction layer, which is also made of transparent dielectric material; (e) a write-once recording layer; (f) a third protective and spacer layer formed on the write-once recording layer, which is also made of transparent dielectric material. Ultra-high density near-field optical recording can be achieved by the localized near-field optical interactions of the zinc-oxide (ZnO) nano-structured thin film that is in the near-field region of the write-once recording layer.

A write head for writing information bits to magnetic storage media includes a first write pole for producing a first magnetic field in a first direction and a second write pole for producing a second magnetic field such that the combined field from the two poles lies either substantially along the first direction or in a second direction that is substantially orthogonal to the first direction. The second write pole includes a free layer having magnetization controlled by spin transfer torque, and a first spacer positioned between the free layer and the first write pole. The write head can further include a pinned layer and a second spacer positioned between the pinned layer and the free layer. A disc drive that includes the write head and a method of writing to magnetic storage media that utilizes the write head are also included.

A write head (66) for writing information bits to magnetic storage media (94) comprises a first write pole (72) for producing a first magnetic field in a first direction and a second write pole (70) for producing a second magnetic field such that the combined field from the two poles lies either substantially along the first direction or in a second direction that is substantially orthogonal to the first direction. The second write pole includes a free layer (76) having magnetization controlled by spin transfer torque, and a first spacer (82) positioned between the free layer and the first write pole. The write head can further include a pinned layer (78) and a second spacer (80) positioned between the pinned layer and the free layer. A disc drive (10) that includes the write head and a method of writing to magnetic storage media that utilizes the write head are also included.

A photovoltaic device comprising a photovoltaic cell and at least one layer, the photovoltaic ceil and at least one layer wrapped from the inside out to form the photovoltaic device having a vertical geometry is provided. The photovoltaic device can be a variety of shapes. These shapes include a cylinder, square, oval, rope, ribbon, oblong and rectangular. Generally, the photovoltaic cell has at least on semiconductor, a hirfi work-function electrode and a low work-function electrode.

A photovoltaic device comprising a photovoltaic cell and at least one layer, the photovoltaic ceil and at least one layer wrapped from the inside out to form the photovoltaic device having a vertical geometry is provided. The photovoltaic device can be a variety of shapes. These shapes include a cylinder, square, oval, rope, ribbon, oblong and rectangular. Generally, the photovoltaic cell has at least on semiconductor, a hirfi work-function electrode and a low work-function electrode.

In various embodiments, optoelectronic devices are described herein. The optoelectronic device may include an optoelectronic cell arranged so as to wrap around a central axis wherein the cell includes a first conductive layer, a semi-conductive layer disposed over and in electrical communication with the first conductive layer, and a second conductive layer disposed over and in electrical communication with the semi-conductive layer. In various embodiments, methods for making optoelectronic devices are described herein. The methods may include forming an optoelectronic cell while flat and wrapping the optoelectronic cell around a central axis. The optoelectronic devices may be photovoltaic devices. Alternatively, the optoelectronic devices may be organic light emitting diodes.