I plan to grow nanometre-sized crystals in confined geometries to examine the strain distributions that result. The crystal growth will employ lithographic processing techniques, made possible by the local expertise in the central clean room facilities of the London Centre for Nanotechnology. My group is world-leading in developing a method called Coherent X-ray Diffraction (CXD). Our CXD strain images of a Pb nanocrystal were published in Nature in 2006. CXD is sensitive to strain because the X-ray diffraction pattern surrounding a Bragg peak can be decomposed into symmetric and antisymmetric parts. To a good approximation, the symmetric part can be considered to come from the real part of the electron density, while the antisymmetric part is a projection of the strain field. The phasing of the data is a critical step that uses a computer algorithm, developed by us, which acts like the lens of a 3D X-ray microscope. CXD works best for nanocrystal sizes between 40nm and 5µm, for crystals strongly attached to substrates and for isolated, fiducialised arrays of crystals that can be cross-referenced with other techniques. To create nanocrystals in this size range, we will use both a bottom-up self-assembly of materials deposited onto templated substrates, designed to introduce strain, and a top-down nanosculpture approach will use lithography techniques to create strain patterns in crystalline materials associated with shapes that are carved into them. The interpretation of the images is the main intellectual output of the project. This will be compared with finite element analysis, and the deviations interpreted as unique properties attributable to the nanoscale. All project participants will work in a design, creation, analysis, interpretation, update cycle that will reveal the new basic principles of nanocrystal structure. In the long run we will transfer CXD technology to Europe: beamline I-13 at Diamond will be ready for CXD in 2011.

DOTFIVE is a three-year IP proposal for a very ambitious project focused on advanced RTD activities necessary to move the Silicon/germanium heterojunction bipolar transistor (HBT) into the operating frequency range of 0.5 terahertz (THz) (500 gigahertz GHz) enabling the future development of communication, imaging or radar Integrated Circuits (IC) working at frequencies up to 160 GHz . For a given lithography node bipolar transistors and more recently HBT have always lead the frequency race compared to MOS devices, while offering higher power density and better analogue performances (transconductance, noise, transistor matching).The main objective of this highly qualified consortium is to establish a leadership position for the European semiconductor industry in the area of millimeter wave (mmW) by research and development work on silicon based transistor devices and circuit design capabilities and know-how. SiGe HBT is a key reliable device for applications requiring power > few mW (future MOS limitation) and enabling high density, low cost integration compared to III-V. To achieve the goal DOTFIVE unites a powerful consortium:

Today, markets demand smaller, cheaper, energy friendly and more different consumer products. Last decades micro technology has opened possibilities for mobile communication, safety and health science products. To meet these demands, the industry is encountering technological barriers that prevent the industry from evolving from the micro to a nanotechnology era. To resolve these barriers, the industry and research institutes need to initiate research programmes, and need to structure and integrate its research programmes and transfer the knowledge that as been acquired in these programmes. “New” researchers have to be trained with excellent research skills, knowledge on the specific technology, and understanding of market demands, application development, and so on. For this purpose 4 industrial, 5 academic and 3 research institutes have defined the 4 year SPAM research and training program; “a Supra-disciplinary approach to research and training in surface Physics for Advanced Manufacturing - SPAM”. Research objectives are: • identify and develop crucial knowledge in the field of surface physics, • enable the manufacturing of smaller semi-conductors and hence technology to print under 32 nm; extreme positional accuracy (< 4 nm); at competitive cost, • use this knowledge to further develop lithography technologies/tools needed for cost efficient development of nano-electronic devices, including manufacturing processes. Training objectives are: • provide personalised individual training, in particular for 16 ESR but also for 6 ER, to prepare and optimise their research in SRTs, with the help of 9 VS. • provide a network-wide training, fully exploiting the network potential and complementarities, leading to 12 network events. • transfer existing knowledge between partners through the SRTs and to transfer newly gained knowledge. Meeting the objectives are the responsibility of 4 Supra-disciplinary Research Teams (SRT) and 5 interlinking Training Exchange Pools.

In the CMOS manufacturing environment, the mask-based optical lithography technique is up to now the driving solution to deal with all industry concerns. Nevertheless, this solution becomes less effective for each new technology node. Effectively, it requires more and more complex and expensive masks due to the introduction of optical proximity correction and phase shift techniques. The blow up of the tool price plays also an important role in the overall cost of ownership of this technique. This trend opens opportunities for the Mask-Less Lithography (ML2) technology, based on multi-beam principles and developed by the two European companies MAPPER and IMS Nanofabrication AG. The cost effective model of the ML2 option in association with the high resolution capability of the electron lithography and a reasonable throughput target represents an attractive alternative for lithography and is supported by some key CMOS manufacturers around the world, like TSMC, STMicroelectronics, QIMONDA, TOSHIBA, and Texas Instruments…_x000d_

The NaPANIL project aims to develop processes, materials and tools, both for manufacturing and for control, for truly 3-dimensional nanosurfaces with feature dimensions ranging from 50 nm to several m. The nanosurfaces will be realised using various variants of nanoimprinting lithography. The dedicated application is to control light at nanostructured surfaces and a few potential high impact products have been identified by the end-user partners in the consortium. Design, demonstration and prototyping these applications will act as test-bench for the new manufacturing paradigm. The manufacturing processes possess generic aspects for production of any kind of topographically 3-dimensional nanostructured surfaces. In the R&D of nanoimprinting Europe has a leading position. The NaPANIL consortium combines the best expertise and know how in field to reach the goals in the project.

Polarimetry is a crucial tool in both fundamental and applied physics, ranging from the measurement of parity nonconservation (PNC) in atoms, to the determination of biomolecule structure, and the probing of interfaces. These measurements tend to be extremely challenging as the change of the polarization of light is usually extremely small; typical differences in polarization states are of the order of 10^-5 to 10^-8. Current experimental techniques often require acquisition times of the order of seconds or, in the case of PNC, even many days, limiting the possibilities of time-resolved measurements. Here, I propose to develop optical-cavity-based techniques which will enhance measurements of the polarization sensitivity and/or the time-resolution by 3-6 orders of magnitude. Preliminary data from prototypes and feasibility studies are presented. I propose to demonstrate how these breakthroughs will revolutionize polarimetry, by addressing some of the most important multidisciplinary problems in fundamental physics, biophysics, and material science: a) Testing the limits of the Standard Model with atomic PNC measurements. Current PNC experiments, and more importantly theory, for cesium atoms are limited to precision of about 0.5%. The novel and robust experimental technique I am proposing here affords 4 orders-of-magnitude higher sensitivity, thus giving access to lighter atoms, where the theory can be better than 0.1%, for the most stringent test of the Standard Model, while seeking new physics. b) The measurement of protein folding dynamics. Highly sensitive time-resolved spectroscopic ellipsometry, providing novel dynamical information on protein folding: nanosecond resolved, position measurements of functional groups of surface proteins, which map out the time-dependent protein structure. c) Determination of thin film thickness and surface density with nanosecond resolution, for the study of processes such as laser ablation and polymer growth.

The newly established Materials Science and Nanotechnology Institute (UNAM) is the first national research institute of Turkey in the area of atomic scale materials and nanotechnology. UNAM is growing as a major research facility equipped with all necessary research infrastructure and advanced research tools to carry out forefront R&D activities. This advanced research facility is available to the researchers of all other institutions. As a centre of excellence, UNAM is expected to provide scientific advising for the state of the art research problems in nanotechnology. Through this project, the Institute can rapidly reach its full potential for research and technological innovation and emerge as an internationally competitive center, integrated firmly into the European Research Area. UNAM is recently established; despite wide recognition within Turkey, so far our exposure to the European scientific community has been limited. We strongly desire to improve this and develop connections to and collaborations with European laboratories, university groups and research institutes through mechanisms to be established in this project. However, UNAM currently suffers from a bottleneck in funding of travel, conference organization. In addition, UNAM needs to increase its PhD staff through postdoctoral and research scientist positions, since full faculty positions through the university are very limited. There is need for a number of trained personnel in high-technology equipment relevant to nanotech in Turkey, such TEM, FIB, lithography equipment. The proposed project will allow UNAM administration to offer internationally competitive salaries for young Turkish scientists receiving doctorates every year in the USA, reversing the brain drain, as well as young European scientists with technical expertise. The proposed project will be critical in overcoming all of these difficulties.

Water immersion lithography has been widely accepted as patterning technology for the 45nm technology node, but solutions for the patterning of 32nm and 22nm technology nodes are not clear yet.

Control of matter via light has always fascinated humankind; not surprisingly, laser patterning of materials is as old as the history of the laser. However, this approach has suffered to date from a stubborn lack of long-range order. We have recently discovered a method for regulating self-organised formation of metal-oxide nanostructures at high speed via non-local feedback, thereby achieving unprecedented levels of uniformity over indefinitely large areas by simply scanning the laser beam over the surface.

The performance of thermoelectric generation has long since been limited by the fact that it depends on hardly tunable intrinsic materials properties. At the heart of this problem lies a trade-off between sufficient Seebeck coefficient, good electrical properties and suitably low thermal conductivity. The two last being closely related by the ambivalent role of electrons in the conduction of both electrical and thermal currents. Current research focuses on materials composition and structural properties in order to improve this trade-off also known as the figure of merit (zT). Recently, evidences aroused that nanoscale structuration (nanowires, quantum dots, thin-films) can improve zT by means of electron and/or phonon confinement. The aim of this project is to tackle the intrinsic reasons for this low efficiency and bring TE conversion to efficiencies above 10% by exploring two unconventional and complementary approaches: Phononic Engineering Conversion consists of modulating thermal properties by means of a periodic, precisely designed, arrangement of inclusions on a length scale that compares to phonon means free path. This process is unlocked by state of the art lithography techniques. In its principles, phononic engineering offers an opportunity to tailor the phonon density of states as well as to artificially introduce thermal anisotropy in a semiconductor membrane. Suitable converter architecture is proposed that takes advantage of conductivity reduction and anisotropy to guide and converter heat flow. This approach is fully compatible with standard silicon technologies and is potentially applicable to conformable converters. The Micro Thermionic Conversion relies on low work function materials and micron scale vacuum gaps to collect a thermally activated current across a virtually zero heat conduction device. This approach, though more risky, envisions devices with equivalent zT around 10 which is far above what can be expected from solid state conversion.