'Modern electronic devices play an increasing role in everyday life and have continuously increasing application domains. Electrostatic Discharges (ESD) and Electro-Magnetic Interferences (EMI) are increasing reliability concerns for electronic applications using advanced micro and nano-technologies. ESD failures are caused by the discharge of electrostatic charges present either on an external body, like humans or machines, or on the device itself. To cope with this problem, ESD protection circuits have to be provided at all pins of a device, to ensure that the discharge currents are safely conducted towards the ground. On the one hand, device susceptibility to EMI is measured by the maximum level of noise it can sustain up to operation failure or malfunction. On the other hand, a device can emit parasitic signal. Both noise emission and susceptibility of devices have to be minimized to obtain reliable applications. With the ever continuing scaling of technologies, the problem of ESD and EMI becomes more and more difficult to cope with since these technologies are more vulnerable to ESD and EMI with each new technology generation. New and original ESD/EMI protection techniques will be investigated in this project. A technology to build protection chips dedicated for ESD and EMI protection will be studied. It will take advantage of System in Package assembly techniques for the connection to the circuit to be protected. Moreover, new material having varistance properties and integrated in the final process phase (above IC) will open a new promising solution to overcome the limitation of current protection approaches in emerging technologies. The project will assist the applicant in professionally re-integrating his country of origin. The applicant will continue his career by joining the only academic research lab in France, involved in his research field, which has the full technology and characterization facilities to carry out this type of research.'

During the last few years, atom chips have been successfully developed for experimental studies on mesoscopic ensembles of ultracold atoms. They consist in surface-mounted microstructures (among several µm to 100 nm), which allow the generation of the fields, required for confining and cooling of neutral atoms. Bose Einstein condensation of alkalis, like Rb87, is optimally achieved with such chips. The theme of this project is the development and construction of the next generation atom chip. Recent experiments on an atom chip have demonstrated a a phase preserving matter wave interferometer based upon radiofrequency-induced (several hundred kHz) adiabatic potentials. However, in order to control and manipulate the hyperfine degrees of freedom (F = 1, 2) of the Rb87 ground state, electromagnetic fields with frequencies of several GHz are necessary. The first part of this project will be the design of new generation atom chips containing microwave circuits, which will enable the interaction of the atoms with the near microwave fields. The adiabatic RF induced potentials will render new trapping geometries possible. The same technique will be extended to the Microwave regime, enabling the production of state-dependent potentials, which is essential for possible implementation of quantum computation in atom chips. Within the project, complex atom chips will be developed and fabricated. They will be mounted in an existing set-up for housing atom chips at the Host institution and experiments on the manipulation of all degrees of freedom of Rubidium will be performed with the mentioned techniques. By means of interferometry experiments, the coherence of mesoscopic ensembles of atoms close to the chip surface will be investigated. Moreover, the coupling of the atoms to a microwave resonator on the chip will be experimentally investigated. This might lead to a new not optical detection scheme of the atoms.

Matter wave quantum technology (MWQT) is an emerging field in which fundamental systems are kept isolated from their environment long enough for them to be useful as quantum systems. Such systems, involving ultracold atoms or ions, have for example already set the best time standards. They are now being developed via interferometric schemes into acceleration sensors for ultra accurate navigation systems, and as highly sensitive gravitational field sensors. More futuristic applications involve secure communication (quantum cryptography) and the quantum computer. Although much progress has been made, many problems remain to be solved. In order to bring these systems closer to the level of applicable technologies, much effort has been dedicated in recent years to miniaturization and integration. A specific example of a successful effort has been the and quot; atomchip and quot; wherein techniques from the semiconductor industry are used to create magnetic fields in which atoms are trapped or guided above a chip. This combination of the fields of quantum optics and microelectronics has brought about great achievements in the past 5 years. Similar efforts have been made with the and quot; ionchip and quot; where a quantum logic gate has been achieved. This expertise serves as the base for the project, while this proposal emphasizes adding new know-how by a unique synergism of experts from the fields of molecular electronics and photonics. In this project, we suggest combining two additional, completely new fields--molecular electronics and tunable photonics--with the above atomchip and ionchip devices, thus enabling a leap in their capabilities. In both fields, much adaptation is needed of the presently available technology, but the effort is worthwhile as a final successful outcome will provide a major step forward for MWQT. The MC fellow has extensive related background. He will receive expert training in all the above four disciplines of science and technology.

The measurements of the time dependent current fluctuations (noise) in mesoscopic devices represent a great tool to investigate electron correlations. This tool can give access to information which is not contained in usual conductance measurements, such as the effective charge of carriers or to distinguish the classical and quantum nature of chaotic scattering in cavities. It can also be used to test particle statistics. The fermionic/bosonic character leads to anti-bunching/bunching of the particles. The antibunching of the fermions is a consequence of the Pauli principle. If a fermionic beam splits into two partial ones, the fluctuations in the two partial beams are anticorrelated. A few years ago the host institute realized a fermionic analogon of the single-source Hanbury-Brown and amp;Twiss (HBT) experiment demonstrating that electrons anti-bunch as a consequence of their fermionic nature. However, bunching of electrons is possible, if for example electrons are paired in a spin singlet state, as realized in conventional superconductors. This pairing would lead to positive correlations. The goal of this project is to `search for positive current cross-correlations due to the entanglement of electrons. We will focus on correlation originated from two different types of entanglement in multiterminal semiconducting nanostructures: Spin entanglement will be studied in superconductor-normal hybrid structures; a superconducting (Nb) electrode will be used as an emitter of correlated electron pairs into a Y-shaped beam splitter constructed in 2-dimensional electron gas (2DEG). Entanglement based on the orbital degree of freedom will be probed in a two-source HBT-interferometer, which will be fabricated in 2DEG operating in the quantum Hall regime. These experiments help to understand and control the entangled mobile electrons which is fundamental for the new field of quantum computation and communication in solid state environment.

The goal of this proposal is to assess the viability of silicon-sensitised erbium doped materials systems for optical device applications. Our work will focus on silicon nanoclusters of 2-4 nm diameter that possess novel optical properties, including the ability to efficiently transfer optical excitation to nearby luminescent species. We aim to exploit the optical sensitisation effects of these nanoclusters, which allow us to couple into Er ions far more effectively than is possible in conventional rare earth-doped glasses. The broad absorption spectrum of the nanoclusters and their very large excitation cross-section will enable us to develop planar optical devices that are pumped in a top down configuration using cheap broad-band sources such as LEDs. Compared to the expensive lasers currently used, we stand to achieve a potential 100-fold reduction in pump power costs by deploying LEDs instead, opening the door for such devices to find applications in local area networks. An amplifier in a waveguide geometry can also allow the fabrication of complex integrated optical circuits, and combine them with silicon technology to achieve electro-optical signal conversion. The erbium-doped silicon-rich silica material will be first characterised and the transfer mechanism will be studied; the fabrication parameters will be varied in order to optimise the efficiency and reduce possible excited state absorption processes. Then, channel waveguides will be characterised (optical gain, scattering, absorption...) under different pumping conditions. The final aim of the project is to demonstrate LED-pumped waveguide amplifiers and lasers in the 1.5 micron range.

Nanoscale integrated electronics requires building blocks with controlled functional properties. Tertiary inorganic nanowires made up of molybdenum, sulphur and iodine (MoSI) are a newly emerging class of one-dimensional objects with a straightforward, scalable synthesis. In nanoelectronics they are to date the only viable alternative to Carbon nanotubes (CNTs). Contrarily to CNTs, they are soluble in a variety of solvents and tend to be monodisperse with all nanowires of a given stoichiometry having identical electronic properties. In order to exploit the functionality of 1D materials in possible nanoelectronic devices such as single-electron or ballistic transistors, the non-equilibrium electron dynamics has to be understood. The goal of this project is a comprehensive investigation of the fast and slow electronic processes occurring in MoSI nanowires. This means applying an external stimulus to drive the electrons out of their equilibrium distribution and monitoring the relaxation processes. The focus is on light and electric fields/currents as external stimuli. Specifically the project addresses ultrafast relaxation processes, long lived excited states and the effect of electric fields. The processes will be investigated as a function of temperature (room temperature to liquid helium temperature) and excitation density. The tools for investigation will be ultrafast pump-probe spectroscopy, photomodulation and electromodulation as well as a combination of pump-probe with further modulation of parameters such as an applied field. The detection will cover the visible, most of the infrared and THz spectral ranges.

In the semiconductor industry, the scaling of MOSFETS ensures the continued reduction in cost and increase in speed. The gate dielectric plays a critical role in this scaling, and extensive research has been carried out on the subject of how to increase the lifetime and integrity of these layers as they become thinner and are subjected to ever increasing current densities and electric fields. The need for a `high-k layer which can be fabricated thicker (while giving equal performance) to replace SiO2 as the dielectric layer in scaled MOSFET devices to stem the leakage current problem is evident. In this project, we intend to refine test methodologies developed by IMEC on relatively well understood high-k candidates like HfO2 and apply these methodologies to more novel materials eg La2O3. The test methodology will focus on controlling the flatband and threshold voltages, Vt shifts, channel mobility, bias temperature instability, charge formation, trapping and amp; de-trapping, and interfacial kinetics for HfO2 films. Electrical measurements will be made on both large and small area capacitors, and on MOSFETs, and special attention will be paid to understanding the different properties of large and small area devices. Subsequently the study will be extended to new materials and these properties will be evaluated in newer high-k candidates, in an attempt to understand the physical mechanisms at work. Another aspect of the project will be the correlation of the electrical data to physical analysis. This will be achieved by the use of materials analysis techniques (SIMS, XPS etc.) to determine chemical environments, and the linking of this data to electrical performance. The goal of the project is to develop a methodology for evaluating the suitability of high-k materials for incorporation into CMOS, and ultimately to identify such a material.

The proposed programme of research will develop a comprehensive theory of models for two extensions of classical dependent type theory: dependent type theory with non-extensional equality, and linear dependent type theory. It will do this by altering the existing theory of models for dependent types in two fundamental ways: firstly, by shifting from one-dimensional to higher-dimensional categories, and secondly, by shifting from cartesian structures to monoidal strucures. It will then look for applications for this generalised theory in, amongst other areas, categorical logic, homotopy theory and quantum computing This programme will be implemented by the Fellow working in close collaboration with members of the host organisation; the Fellow will bring skills and experience in the area of higher-dimensional category theory, enriched category theory, and linear logic; the host organisation, skills and experience in dependent type theory. This project fits tightly with the objectives of the Specific Programme of the EIF and the broader Human Resources and Mobility Work Programme, by providing the Fellow with an opportunity to undergo training through research, thereby diversifying his technical expertise from higher-dimensional category theory to the complementary area of dependent type theory and its applications in theoretical computer science. By providing him with the opportunity to relocate from the UK to Uppsala, Sweden, it will allow this training to take place in the location most suitable for his needs, namely at an internationally recognised centre of excellence in dependent type theory. Moreover, by promoting a cross-fertilisation of the still distinct disciplines of categorical logic and dependent type theory, it will lead to the development of a new area of research and the creation of European centres of excellence in this new area, thereby increasing Europe and apos; s competiveness and attractiveness to researchers in the field.

ENVIROMIS-SSA forms coherent set of coordination, dissemination and education actions directly aimed at environment and health protection and related safety aspects, stabilisation of research and development potential in Russia and other NIS countries. Being based on modern monitoring, information and computational technologies it might indirectly facilitate changes in the industrial production system as well. To reach these objectives a threefold approach will be used: Networking of leading environmental research organizations in Belarus, Russia, Kazakhstan, Ukraine and Uzbekistan aimed at research cooperation and dissemination, transfer, exploitation, assessment and/or broad take-up of past and present programme results obtained by the Network members and their European partners; Support of special information-computational system opening free Internet access to thematic and general information resources in area of Environmental Sciences for professionals, students and general public thus providing an opportunity for information dissemination, continuous distant e-learning, and public awareness; Organization of multidisciplinary thematic Young Scientist Schools collocated with International conferences on Environment Sciences. Each event will give a room for a special session devoted to presentation of results of recent and ongoing FP5 and FP6 projects performed within INCO, ESD and 1ST Programmes. Recent NIS graduates and postgraduates training in modern information and computation technologies forming a backbone of Environmental Sciences at International Schools and Conferences and by means of IT and dissemination to the targeted audience information on FP6 opportunities should lead to growing a generation of researches able to assess current state of environment, to understand and prognose basic tendencies of its evolution under pressure of natural and anthropogenic processes and ready to be a part of European Research #

ASSEMIC is devoted to training and research in handling and assembly at the micro-dimension, involving advanced methods and tools and providing a multidisciplinary, complementary approach. This is to be achieved by combining the research competence of R&D centres and universities, with the application oriented view from SMEs and industrial partners. The scientific and technical complementarity required by micro-handling and assembly -an intrinsically multidisciplinary topic- will be ensured by merging the partners’ expertise in fields as design of hybrid MEMS and micro-tools, material physics and tribology, laser technology, advanced control techniques and artificial intelligence, etc. Following workpackages have been defined: 1. High resolution positioning systems, micromotors and microrobots. 2. Advanced tools and control for microhandling (visual/force feedback, haptic interfaces, etc.) 3. Microassembly tools and strategies (self-assembly, bonding, soldering…) 4. Quality management for industrial manufacturability 5. Know-how management (e-learning, technology transfer and dissemination, etc.) Special focus will be placed in training and dissemination, including workshops, open-door days, summer schools, newsletters and e-learning. Optimized and cost efficient handling and assembly of hybrid Microsystems keeps being a challenge, as assembly and packaging constitutes still a great part of MEMS manufacturing costs. ASSEMIC will raise the European technological competence and merge the research effort in this field, by multidisciplinary training both early-stage and experienced researchers in highly qualified research centres and universities, developing research and providing the practical focus of SMEs and industrial partners.