A dispersion containing zinc oxide particles having a dispersion particle size of (i) median volume particle diameter in the range from 70 to 130 nm, (ii) less than 16% by volume of particles having a volume diameter of less than 35 nm below the median volume particle diameter, and (iii) more than 84% by volume of particles having a volume diameter of less than 57 nm above the median volume particle diameter. The zinc oxide dispersion can be used in a sunscreen product that exhibits both effective UV protection and improved transparency. The zinc oxide is particularly suitable for use in combination with transparent titanium dioxide.

A dispersion containing zinc oxide particles having a dispersion particle size of (i) median volume particle diameter in the range from 70 to 130 nm, (ii) less than 16% by volume of particles having a volume diameter of less than 35 nm below the median volume particle diameter, and (iii) more than 84% by volume of particles having a volume diameter of less than 57 nm above the median volume particle diameter. The zinc oxide dispersion can be used in a sunscreen product that exhibits both effective UV protection and improved transparency. The zinc oxide is particularly suitable for use in combination with transparent titanium dioxide.

The present disclosure includes methods, devices, and systems for zinc oxide diodes for optical interconnections. One system includes a ZnO emitter confined within a circular geometry in an oxide layer on a silicon substrate. An optical waveguide is formed in the oxide layer and has an input coupled to the ZnO emitter. A detector is coupled to an output of the optical waveguide.

The present disclosure includes methods, devices, and systems for zinc oxide diodes for optical interconnections. One system includes a ZnO emitter confined within a circular geometry in an oxide layer on a silicon substrate. An optical waveguide is formed in the oxide layer and has an input coupled to the ZnO emitter. A detector is coupled to an output of the optical waveguide.

The present disclosure includes methods, devices, and systems for zinc oxide diodes for optical interconnections. One system includes a ZnO emitter confined within a circular geometry in an oxide layer on a silicon substrate. An optical waveguide is formed in the oxide layer and has an input coupled to the ZnO emitter. A detector is coupled to an output of the optical waveguide.

The present disclosure includes methods, devices, and systems for zinc oxide diodes for optical interconnections. One system includes a ZnO emitter confined within a circular geometry in an oxide layer on a silicon substrate. An optical waveguide is formed in the oxide layer and has an input coupled to the ZnO emitter. A detector is coupled to an output of the optical waveguide.

Devices and methods of fabrication of ZnO based single and multi-junction photovoltaic cells are disclosed. ZnO based single and multi-junction photovoltaic cells, and other optoelectronic devices include p-type, n-type, and undoped materials Of Zn_xA₁- _xO_yB_1-y. wherein the alloy composition A and B, expressed by x and y, respectively, varies between 0 and 1. Alloy element A is selected from related elements including Mg, Be, Ca, Sr, Cd, and In and alloy element B is selected from a related elements including Te and Se. The selection of A, B, x and y, allows tuning of the material's band gap. The band gap of the material may be selected to range between approximately 1.4 eV and approximately 6.0 eV. Zn_xA_1-xOyB_1-y based tunnel diodes may be formed and employed in Zn_xA_1-x O_yB _1-y based multi -junction photovoltaic devices. Zn_xA_1-xO_yB_1-y based single and multi-junction photovoltaic devices may also include transparent, conductive heterostructures and highly doped contacts to ZnO based substrates.

Devices and methods of fabrication of ZnO based single and multi-junction photovoltaic cells are disclosed. ZnO based single and multijunction photovoltaic cells, and other optoelectronic devices include p-type, n-type, and undoped materials of ZnxA1-xOyB1-y, wherein the alloy composition A and B, expressed by x and y, respectively, varies between 0 and 1. Alloy element A is selected from related elements including Mg, Be, Ca, Sr, Cd, and In and alloy element B is selected from a related elements including Te and Se. The selection of A, B, x and y, allows tuning of the material's band gap. The band gap of the material may be selected to range between approximately 1.4 eV and approximately 6.0 eV. ZnxA1-xOyB1-y based tunnel diodes may be formed and employed in ZnxA1-xOyB1-y based multi-junction photovoltaic devices. ZnxA1-xOyB1-y based single and multi-junction photovoltaic devices may also include transparent, conductive heterostructures and highly doped contacts to ZnO based substrates.